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Microtechnology Fabrication and Characterization of RuO2-Al2O3 Suspended Microbridge Infrared Detector Array
|Authors: ||Wei-Chia Huang|
|Contributors: ||NTOU:Department of Electrical Engineering|
array infrared sensor;RuO2-Al2O3;suspended bridge structure;bolometer
|Issue Date: ||2011-06-22T09:03:37Z
|Abstract: ||本論文研究之RuO2-Al2O3薄膜因有較高的電阻溫度係數，所以是應用在非冷卻型熱輻射感測器的重要熱敏電阻材料，本實驗以鋁當犧牲層建立懸浮結構，以SiO2作支撐，以射頻磁控濺鍍系統成長RuO2-Al2O3薄膜於懸橋結構上，再利用蝕刻技術達到懸浮效果，進而提昇元件響應特性，並以微機電製程技術製作熱阻式32x32陣列型紅外線感測器，同時進行量測與分析。 在RuO2-Al2O3薄膜方面，以四點量測進行薄膜的量測，實驗結果顯示薄膜電阻轉換特性與薄膜沉積時的壓力及溫度條件有很大的關係，經由R-T曲線、SEM圖等實驗結果得知，RuO2-Al2O3薄膜成長溫度在120℃，成長壓力在1.7x10-2 torr時，電阻溫度係數可達-1.4%K-1。 本論文將所完成之陣列式感測元件進行特性量測，操作溫度於300K，外加+3V的偏壓，Shutter頻率為0.2~10 Hz的條件下，元件的響應度在0.2Hz可達最大值2317 (V/W)，隨著Chopper頻率增加成線性遞減。根據上述量測獲得之響應度及雜訊電壓結果，可得知歸一化感測度D*最大值為8.08 (107cmHz1/2/W)。 本論文亦將所完成之陣列式感測元件進行影像量測，將一光源經過數道透鏡後，聚成一微小光源，照在感測元件上，利用每一個pixel的電阻變化量製作影像圖，以電阻最大改變量137KΩ來定義色階，將影像圖顯現出來。|
The purpose of this thesis is to study an uncooled bolometer with high Temperature Coefficient of Resistance. An experiment is made by taking Al to form a suspended structure as the sacrifice layer, SiO2 to form a support layer, Radio Frequency Magnetron Sputtering System to grow the RuO2-Al2O3 thin film on the suspended & bridged structure, and follow to apply an etching technology to achieve the suspension structure that was able to further improve the responsive characteristics of sensor; meanwhile, an infrared sensor in 32x32 array of thermal-resistance was fabricated by applying the processing technology of micro electro-mechanical system with the measurements and analyses carried out at the same time. A 4-point probe system was used to measure the RuO2-Al2O3 thin film, and the experimental results show that the resistance-switching characteristic is closely related to the conditions of pressure and temperature for thin-film deposition; as learned from the R-T curves and SEM charts according to the experimental results, the RuO2-Al2O3 thin film has a temperature coefficient of resistance up to -1.4%K-1 at a deposition temperature 120℃ and a deposition pressure 1.7x10-2 torr. This thesis took the fabricated sensor array to process the characteristic measurement; we set the operation temperature at 300K, with an applied bias voltage of +3V and shutter frequency of 0.2~10Hz, the responsivity of the device at 0.2 Hz can reach a maximum value of 2317 (V/W); a linear reduction can be seen along with the increase in shutter frequency. According to the responsivity and noise equivalent power obtained from the above measurement, it can be seen that the maximum value of normalized detecivity D* is 8.08 (107cmHz1/2/W). This thesis also took the fabricated sensor array to process an image measurement; wherein, a light source was condensed to a micro light-spot after being routed through several lenses to irradiate on the sensor while the resistance variation of each pixel was taken to make the image diagram; and a maximum resistance variation, 137KΩ, was taken to define the color level to display the image diagram.
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