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Femtosceond pump-probe spectroscopy in a-plane InN
|Authors: ||Cheng-Yu Chang|
|Contributors: ||NTOU:Institute of Optoelectronic Sciences|
|Issue Date: ||2011-06-22T08:37:48Z
We used a femtosecond time-resolved pump and probe reflectivity measurement to investigate the carrier dynamics of a-plane indium nitride (InN). Laser power was used to modify carrier density to observe the interaction between the hot carrier relaxation rate and carrier density. Wavelength range was also altered to observe the interaction between the relaxation rate of hot carrier energy and kinetic energy in normal carrier density circumstances. In this study, the authors observed that the hot carrier relaxation rate and hot carrier density are in direct ratio to one another. Thus, it was predicted that electron-electron scattering is a crucial element in the hot carrier relaxation process. The carrier recombination process was seemingly influenced by the defect recombination process and the Auger recombination process. The defect recombination process was completed in 303ps, 434ps, and 909ps respectively; while the Auger recombination was completed in 4.9×10-11(cm3/s), 5.4×10-11(cm3/s), and 3.1×10-11(cm3/s). In the study involving the modification of the laser wavelength, the hot electron relaxation rate and hot electron energy were at a 0.7 ratio when the carrier density was at 8.8×1018cm-3; when the carrier density was at 1.4×1018cm-3, the hot electron relaxation rate and hot electron energy were at a 0.6 ratio; when the carrier density was at 2.1×1018cm-3, the hot electron relaxation rate and hot electron energy were at a 0.5 ratio. These results were similar to what was predicted theoretically; however, the reason behind the fall in the interaction between the hot energy relaxation rate and hot energy were not clear and cannot be fully accounted for.
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