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Title: 穿透式Z掃描量測氮化銦磊晶薄膜的非線性吸收特性
Characterization of nonlinear absorption of InN epitaxial films by transmission Z-scan technique
Authors: Tsung-Han Wu
Contributors: NTOU:Institute of Optoelectronic Sciences
Keywords: Z掃描;氮化銦;非線性吸收
Z-scan;InN;nonlinear absorption
Date: 2008
Issue Date: 2011-06-22T08:37:34Z
Abstract: 我們以穿透式Z-掃描實驗技術探討氮化銦薄膜的非線性吸收特性。利用飛秒雷射,光子能量在遠大於材料能隙下(~ 0.8eV)做不同的入射光子能量來研究氮化銦飽和吸收的特性。在入射波長790、750、740、730、720nm的氮化銦薄膜Z-掃描量測結果中,凝合得到吸收截面積σ分別為(-2.7±1.2)E-17、(-1.5±0.1)E-17 、(-7.4±1.4)E-18 、(-4.2±1.3)E-18、(-3.7±0.5)E-18 (cm^2);同時我們以能帶填充理論,在合理假設範圍內帶入載子溫度,求得吸收截面積理論值。比較後得知,非線性飽和吸收實驗分析與能帶填充理論的半導體吸收模型有很好的近似結果。
We report the observation of the nonlinear absorption in InN thin film in the transmission Z-scan measurement, and used femtosecond with wavelength 720 to 790nm laser pulse which photon energies above the band-gap(~0.8eV) of InN. A cross section,σ of nonlinear absorption has been obtained after fitted our data of result. We finding σ = (-2.7±1.2)E-17、(-1.5±0.1)E-17 、(-7.4±1.4)E-18 、(-4.2±1.3)E-18、(-3.7±0.5)E-18 (cm^2)in distinct wavelength measurement 790, 750, 740, 730, 720nm, respectively. We also present a band-filling theory for the band-gap resonant nonlinear in direct-band-gap semiconductors of our samples with reasonable carrier temperature. A comparison shows that the theory is in good agreement with the experimental result.
URI: http://ethesys.lib.ntou.edu.tw/cdrfb3/record/#G0M95880021
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