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Study of Crystallized Semiconductor Thin Films by Near-Field Optical Microscopy
|Authors: ||Te-Lung Tseng|
|Contributors: ||NTOU:Institute of Optoelectronic Sciences|
|Issue Date: ||2011-06-22T08:37:04Z
Recently, Ⅲ-nitride semiconductors and organic semiconductors have been extensively developed in the applications of optoelectronics. We used the polarization modulated near-field scanning optical microscopy (PM-NSOM), which have high resolution in image formation by using the difference in the absorption of light with different polarization, to study the crystallinity and optical properties of InGaN semiconductor layers and Alq3 organic semiconductor layers. For the InGaN thin films, we found that the V-defects act as the non-radiative recombination centers and their crystallinity is poor. Besides, the In-rich clusters surrounding the V-defects act as radiative recombination center and their crystallinity is better. For the Alq3 thin films, it was found that Alq3 films fabricated with low-temperatured process (-150℃) show better crystallinity. The organic light emitting diodes (OLEDs) using this low-temperatured Alq3 layer show better radiative efficiency compared with that of the conventional OLEDs.
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