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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/52722

Title: EMS Characterization of LDO with On-chip Decaps by Using Direct RF Power Injection Method
Authors: Yin-Cheng Chang;Ping-Yi Wang;Hsu-Feng Hsiao;Ta-Yeh Lin;Shawn S.H. Hsu;Mao-Hsu Yen;Ming-Shan Lin;Da-Chiang Chang
Contributors: 國立臺灣海洋大學:資訊工程學系
Keywords: Energy management;Integrated circuits;Radio frequency;Immunity testing;Capacitors;Wideband
Date: 2018-11
Issue Date: 2019-12-25T07:58:44Z
Publisher: IEEE
Abstract: A fully integrated low dropout regulator (LDO) with decoupling capacitors (decaps) for high electromagnetic immunity is designed in the standard 0.18 μm CMOS technology. The decaps composed of MOS and MoM capacitors are utilized to decouple the high frequency interference. The characteristic of electromagnetic susceptibility (EMS) of the LDO is performed by the direct RF power injection (DPI) measurement up to 18 GHz. The measured results demonstrate the immunity of LDO with decaps is superior to that of LDO without decaps (maximum improvement of 11.6 dB). Also, the wideband DPI measurement is shown to be capable of characterizing the EMS of ICs.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/52722
Appears in Collections:[資訊工程學系] 演講及研討會

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