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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/52625

Title: Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure
Authors: Wen-Shiung Lour
Kuo-Yen Hsu
Tzung-Min Tsai
Kang-Ping Liu
Tze-Hsuan Huang
Kun-Chieh Liang
Hsuan-Wei Huang
Jung-Hui Tsai
Shao-YenChiu
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Dipole
GaN
Hydrogen
Sensor
Date: 2009-09
Issue Date: 2019-12-06T01:57:07Z
Publisher: Semiconductors
Abstract: Abstract: This paper reports on new GaN sensors using a Pd-mixture-Pd triple-layer sensing structure to enhance their sensitivity to hydrogen at the tens of ppm level. The proposed hydrogen sensor biased with a constant voltage produced relatively high sensing responses of ∼4.84 × 105% at 10,100 ppm and ∼8.7 × 104% at 49.1 ppm H2 in N2. The corresponding barrier height variations are calculated to be 220 and 168 mV. When the sensor is biased by a constant current with maximum power consumption of 0.4 mW, a sensing voltage as an output signal showed a voltage shift of more than 17 V (the highest value ever reported) at 49.1 ppm H2 in N2. By comparison to Pd-deposited GaN sensors, the improvement in static-state performance is likely attributed to double dipole layers formed individually at the Pd–GaN interface and inside the mixture. Moreover, voltage transient response and current transient response to various hydrogen-containing gases were experimentally studied. The new finding is that the former response time is shorter than the latter one.
Relation: 141(7) pp 532-537
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/52625
Appears in Collections:[電機工程學系] 期刊論文

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