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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/52614

Title: High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2
Authors: S.Y. Chiu
H.W. Huang
K.C. Liang
T.H. Huang
K.P. Liu
J.H. Tsai
W.S. Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2009-02
Issue Date: 2019-12-02T06:40:54Z
Publisher: Semiconductor Science and Technology
Abstract: Abstract:A metal–semiconductor–metal Pd/GaN hydrogen sensor with a porous-like mixture of Pd and SiO2 is investigated. Besides symmetrically bidirectional sensing characteristics with a widespread voltage regime (at least −5–5 V), a high sensing response of 8 × 105 (7.7 × 106) corresponding to a Schottky barrier height variation of 352 (411) meV is obtained in a 4890 ppm H2/N2 ambience at a voltage of −1.5 (−5) V. A highly efficient dissociation of hydrogen molecules due to an enhanced catalytic activity of the mixture explains the improved performance. Furthermore, dynamic responses by alternately switching voltage polarity and introducing and removing hydrogen-containing gases are also included to evaluate the proposed device as a high sensing response and low power sensor.
Relation: 24(4)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/52614
Appears in Collections:[電機工程學系] 期刊論文

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