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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/52613

Title: Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors
Authors: Wen-Chau Liu
Ghun-Wei Ku
Der-Feng Guo
Jung-Hui Tsai
Wen-Shiung Lour
Shiou-Ying Cheng
Chi-Jhung Lee
Tzu-Pin Chen
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: gallium arsenide
gallium compounds
heterojunction bipolar transistors
III-V semiconductors
indium compounds
III-V semiconductors
indium compounds
semiconductor device reliability
thermal stability
Date: 2009-11
Issue Date: 2019-12-02T06:23:40Z
Publisher: Electrochemical and Solid-State Letters
Abstract: Abstract:The temperature-dependent characteristics of Formula heterojunction bipolar transistors with different emitter ledge thickness Formula are studied and demonstrated. From experimental results, devices Formula Formula and Formula Formula show the highest current gains, lowest base current, and base current ideality factors. Devices Formula and Formula also exhibit an improved thermal stability on dc current–voltage characteristics. Moreover, device Formula shows the best reliability performance after a Formula stress test. Therefore, the data support that the optimum emitter ledge thickness is between 100 and Formula .
Relation: 12(2) pp 41-43
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/52613
Appears in Collections:[電機工程學系] 期刊論文

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