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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/52610

Title: GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration
Authors: W.S. Lour*
J.H. Tsai
H.W. Huang
K.P. Liu
T.H. Huang
K.C. Liang
S.Y. Chiu
Contributors: 國立臺灣海洋大學電機工程學系
Keywords: GaN Sensors
Date: 2009-03
Issue Date: 2019-11-29T03:55:45Z
Publisher: Jpn. J. Appl. Phys.
Abstract: Abstract:The roles of micro-metal-oxide (MO) interfaces inside a sensing metal formed by coevaporating Pd and SiO2 in metal-semiconductor-metal GaN sensors are investigated. The porous property of the Pd and SiO2 mixture together with the presence of micro-MO interfaces gives rise to a highly efficient dissociation of hydrogen molecules and hence an enhanced barrier height variation (DeltaphiB) of a reverse-biased Schottky diode. The measured DeltaphiB increases from 294 to 392 mV at a concentration coefficient of 25 mV/decade as the hydrogen concentration increases from 2.13 to 10100 ppm H2/N2. Therefore, when the sensor is subjected to 0.02 ppm H2/N2, DeltaphiB as high as 245 mV is still expected. The sensor in a 2.13 ppm H2/N2 ambience has a sensing response of 8.7× 104. Excellent dynamic responses are demonstrated by switching voltage polarity or continuously changing hydrogen concentration, showing that the proposed structure is a promising hydrogen sensor.
Relation: 48(4)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/52610
Appears in Collections:[電機工程學系] 期刊論文

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