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Title: Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer
Authors: Shih-Wen Lai
Jung-Hui Tsai
Shih-Wei Tan
Wen-Shiung Lour
Chieh Lo
Contributors: 國立臺灣海洋大學電機工程學系
Keywords: GaN
Hydrogen sensor
Date: 2011-11
Issue Date: 2019-11-29T03:12:32Z
Publisher: Electronics Letters
Abstract: Abstract:Pd-based mixtures comprising silicon dioxide (SiO2) were used as sensing materials in fabrication of GaN-based hydrogen sensors. The mixture as-deposited has a rough surface with many pores. After wet selectively etching to remove SiO2, the mixture turns into Pd nanoparticles with a size of ∼ 30 nm on an interlayer with oxygen, as indicated by SEM, EDX, and SIMS methods. A careful study of the Pd-mixture on a metal-semiconductor-metal type of hydrogen sensor provides significant information on the roles of oxygen and the interlayer. Experimental results reveal that hydrogen atoms trapped inside the mixture as-deposited cannot contribute to changes in barrier height as an applied voltage is not large enough. Improved sensing properties such as hydrogen dissociation rate, diffusion rate, and storage capability were obtained when Pd nanoparticles were formed by selectively etching the mixture. The situation that hydrogen atoms were blocked and disturbed by oxygen will exist no more. Uniform sensing responses of higher than 105 (defined as (JH2-JN2)/JN2, JH2 and JN2 are current densities measured in H2/N2 and N2 ambiences, respectively), voltage shifts of larger than 20 V were obtained at 2.13 ppm H2/N2. In addition, hydrogen transport through grain boundaries of Pd nanoparticles is much faster than diffusion through a Pd-mixture layer. A much shorter response time was obtained from the sensors with the Pd-mixture wet etched. Furthermore, stable and reliable sensing characteristics were also expected.
Relation: 36(23) pp 15446-15454
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/52607
Appears in Collections:[電機工程學系] 期刊論文

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