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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51803

Title: Dual-Gate In0.5Ga0.5PIn0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing
Authors: W-S Lour
M-K Tsai
K-C Chen
Y-W Wu
S-W Tan
Y-J Yang
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2001-08-30
Issue Date: 2018-12-25T01:16:00Z
Publisher: Semiconductor Science and Technology
Abstract: Abstract: In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors (PHEMTs) fabricated using single- and dual-gate methodologies have been characterized with special emphasis on precisely controlling the device linearity and the gate-voltage swing. A composite channel employing a GaAs delta-doped (δ(n+)) sheet and an undoped In0.2Ga0.8As layer characterizes the key features of the proposed PHEMT profile. Better carrier confinement for both the electron and the hole due to the InGaP/InGaAs hetero-interface and superior carrier transport properties at the channel/buffer interface, together with the redistributed carrier profile, contribute to high-linearity performances. On the other hand, high etching selectivity between the GaAs cap and the InGaP Schottky layers makes it possible to precisely position both of the gates. The gate-voltage dependence of transconductance for the first equivalent gate with several VGS2 shows that the available gate-voltage swing is in the range 0-4.0 V.
Relation: 16(10)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51803
Appears in Collections:[電機工程學系] 期刊論文

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