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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51774

Title: beta-SiC Photodetectors Prepared on Silicon Substrates by Rapid Thermal Chemical Vapor Deposition
Authors: Kuen-Hsien Wu
Yean-Kuen Fang
Jing-Hong Zhou
Jyh-Jier Ho
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 1997-03
Issue Date: 2018-12-21T08:44:16Z
Publisher: Japanese Journal of Applied Physics
Abstract: Abstract: β-SiC photodiodes were fabricated on Si substrates by rapid thermal chemical vapor deposition (RTCVD). Experimental results show that the developed photodiodes have a peak photoresponsivity at 575 nm which corresponds to the visible light between yellow and green. These photodiodes display a low dark current of about 10 nA and 5 µ A at reverse biases of 1 V and 10 V, respectively, and have an optical gain of about 97 under an incident light power of 5 µ W and a reverse bias of 14.5 V. Dark-current levels versus reverse bias have also been measured as a function of temperature, and the results indicate that these diodes can operate at elevated temperatures above 200° C. Thus β-SiC is a candidate for optoelectronic devices on Si substrates in applications, where low cost, silicon compatibility, and high-temperature operation are the prime considerations.
Relation: 36(8)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51774
Appears in Collections:[電機工程學系] 期刊論文

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