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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51772

Title: An SiCSi Heterostructure Negative-Differential-Resistance Diode for High-Temperature Applications
Authors: K.H. Wu
Y.K. Fang
Jyh-Jier Ho
W.T. Hsieh
T.J. Chen
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 1998-04
Issue Date: 2018-12-21T08:38:54Z
Publisher: Applied Physics Letters
Abstract: ABSTRACT: In this letter, we report the observation of N-shaped negative-differential-resistance (NDR) characteristics in a SiC/Si heterostructure diode. The typical NDR in this device has a peak-to-valley current ratio (PVCR) of 44 and a high peak current of 4.8 mA at room temperature. A possible model based on the multi-tunneling process was proposed to explain the origin of the NRD in this device. The most attractive feature of this device is its high-temperature NDR characteristics. An obvious NDR with a PVCR of as high as 9 is obtained at 200 °C, indicating that this SiC/Si heterostructure NDR diode is promising for high-temperature electronic applications.
Relation: 72(23)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51772
Appears in Collections:[電機工程學系] 期刊論文

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