English  |  正體中文  |  简体中文  |  Items with full text/Total items : 28595/40626
Visitors : 4204434      Online Users : 66
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51770

Title: Novel SiCSi Hetero-structure Negative-Differential-Resistance Diode for Use as Switch with High OnOff Current Ratio and Low Power Dissipation
Authors: K.H. Wu
Y.K. Fang
Jyh-Jier Ho
W.T. Hsieh
T.J. Chen
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Switches
Silicon carbide
Power dissipation
Semiconductor films
Logic devices
Logic circuits
Switching circuits
Date: 1998-08
Issue Date: 2018-12-21T08:32:07Z
Publisher: IEEE Electron Device Letters
Abstract: Abstract: A novel p-SiC/n-Si heterostructure negative-differential-resistance (NDR) diode with special current-voltage (I-V) characteristics is reported. Under reverse biases, the I-V curve of this device possesses an N-shaped NDR with a high peak-to-valley current ratio (PVCR) and a broad high-impedance valley region. For use as a switch, it can easily achieve a very low off-state current and a high on/off current ratio, as compared to the conventional N-shaped NDR devices. Hence, performance with a more effective switching action and lower power dissipation can be expected. Furthermore, obvious NDR's can even be obtained at a temperature up to 300/spl deg/C, indicating this device is also potential for high-temperature applications.
Relation: 19(8) pp.294-296
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51770
Appears in Collections:[電機工程學系] 期刊論文

Files in This Item:

File Description SizeFormat

All items in NTOUR are protected by copyright, with all rights reserved.


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback