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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51768

Title: High-speed Amorphous Silicon Germanium Infrared Sensors Prepared on Crystalline Silicon Substrates
Authors: Jyh-Jier Ho
Y.K. Fang
K.H. Wu
S.C. Huang
M.S. Ju
Jing-Jenn Lin
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Amorphous silicon
Germanium
Infrared sensors
Crystallization
Buffer layers
Gallium arsenide
MESFETs
High speed optical techniques
Optical buffering
Optical sensors
Date: 1998-09
Issue Date: 2018-12-21T08:25:56Z
Publisher: IEEE Transactions on Electron Devices
Abstract: Abstract: Different structures of high-speed infrared sensors based on amorphous silicon germanium and amorphous silicon heterostructures have been successfully developed on crystalline silicon substrates. Experimental results of these developed structures exhibit a superior device performance to that of a traditional p-i-n amorphous photosensor prepared on a glass substrate, especially significant improvements in the rise-time from 465 to 195 /spl mu/s, and the dark-current from 50 to 3.3 /spl mu/A for 5 V reverse-bias.
Relation: 45(9) pp.2085-2088
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51768
Appears in Collections:[電機工程學系] 期刊論文

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