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题名: Narrow Width Effects of Bottom-Gate Polysilicon Thin Film Transistors
作者: D.N. Yaung
Y.K. Fang
K.C. Hwang
K.Y. Lee
K.H. Wu
J.J. Ho
C.Y. Chen
Y.J. Wang
M.S. Liang
J.Y. Lee
S.G. Wuu
贡献者: 國立臺灣海洋大學:電機工程學系
关键词: Thin film transistors
Threshold voltage
Grain size
Tail
Grain boundaries
Size measurement
Liquid crystal displays
Random access memory
Circuits
Semiconductor films
日期: 1998-11
上传时间: 2018-12-21T08:22:47Z
出版者: IEEE Electron Device Letters
摘要: Abstract: The effects of channel width on the characteristics of both hydrogenated and unhydrogenated bottom-gate polysilicon thin-film transistors (TFTs) were investigated in detailed. For unhydrogenated and silane gas formed TFTs, a drastic decrease in threshold voltage is observed due to the grain-boundary traps are reduced when the channel width is reduced to less than grain size, but the minimum drain current sensitive to intragranular tail states are nearly unchanged. After hydrogenation, almost grain boundary traps and intragranular tail states were passivated, the effect of traps along poly channel edges caused by the definition of poly channel pattern will dominate, i.e., threshold voltage and minimum drain current increase with decreasing channel width. Also disilane gas formed TFTs are studied for comparison.
關聯: 19(11) pp.429-431
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51767
显示于类别:[電機工程學系] 期刊論文

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