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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51767

Title: Narrow Width Effects of Bottom-Gate Polysilicon Thin Film Transistors
Authors: D.N. Yaung
Y.K. Fang
K.C. Hwang
K.Y. Lee
K.H. Wu
J.J. Ho
C.Y. Chen
Y.J. Wang
M.S. Liang
J.Y. Lee
S.G. Wuu
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Thin film transistors
Threshold voltage
Grain size
Grain boundaries
Size measurement
Liquid crystal displays
Random access memory
Semiconductor films
Date: 1998-11
Issue Date: 2018-12-21T08:22:47Z
Publisher: IEEE Electron Device Letters
Abstract: Abstract: The effects of channel width on the characteristics of both hydrogenated and unhydrogenated bottom-gate polysilicon thin-film transistors (TFTs) were investigated in detailed. For unhydrogenated and silane gas formed TFTs, a drastic decrease in threshold voltage is observed due to the grain-boundary traps are reduced when the channel width is reduced to less than grain size, but the minimum drain current sensitive to intragranular tail states are nearly unchanged. After hydrogenation, almost grain boundary traps and intragranular tail states were passivated, the effect of traps along poly channel edges caused by the definition of poly channel pattern will dominate, i.e., threshold voltage and minimum drain current increase with decreasing channel width. Also disilane gas formed TFTs are studied for comparison.
Relation: 19(11) pp.429-431
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51767
Appears in Collections:[電機工程學系] 期刊論文

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