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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51766

Title: High-responsivity porous-SiC thin-film pn junction photodetector
Authors: K.H. Wu
Y.K. Fang
W.T. Hsieh
Jyh-Jier Ho
W.J. Lin
J.D. Hwang
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 1998-11-12
Issue Date: 2018-12-21T08:19:29Z
Publisher: Electronics Letters
Abstract: Abstract: A porous-SiC thin-film photodetector with a pn junction structure has been successfully fabricated on a Si substrate. The developed device exhibits a high responsivity of 0.4 A/W at 25/spl deg/C for 650 nm irradiation. In particular, the device has a responsivity of 0.35 A/W and a photo/dark current ratio larger than 100 at 200/spl deg/C, indicating its potential capability for high-temperature operation.
Relation: 34(23) pp.2243-2244
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51766
Appears in Collections:[電機工程學系] 期刊論文

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