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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51765

Title: A High Optical-Gain beta-SiC Bulk-Barrier Phototransistor for High-temperature Applications
Authors: K.H. Wu
Y.K. Fang
Jyh-Jier Ho
W.T. Hsieh
W. H. Chuang
J. D. Hwang
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Phototransistors
Silicon carbide
Temperature
Optical films
Optical materials
Optical devices
Conducting materials
Optical buffering
Solid state circuits
Photodetectors
Date: 1998-11
Issue Date: 2018-12-21T08:17:21Z
Publisher: IEEE Photonics Technology Letters
Abstract: Abstract: A high optical-gain /spl beta/-SiC phototransistor (PT) with a bulk-barrier structure has been fabricated on a silicon substrate. It demonstrated high optical gains of 145 at 25/spl deg/C and 106 at 250/spl deg/C, under a 10-V bias and 10-μW incident optical power with a wavelength of 500 nm. The high optical gains at elevated temperatures are attributed to not only the excellent high-temperature properties of SiC materials, but also the bulk-barrier structure, in which the formed potential barrier, the short base region and an effect of thinning the quasi-neutral base region to zero thickness lead to a greatly enhanced current gain. The developed /spl beta/-SiC bulk-barrier PT possesses a potential for high-temperature high-gain optical-sensing applications.
Relation: 10(11) pp.1611-1613
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51765
Appears in Collections:[電機工程學系] 期刊論文

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