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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51763

Title: Switching Transient Analysis of a Metal Ferroelectric Semiconductor Switch Diode with High Speed Response to Infrared Light
Authors: F.Y. Chen
Jyh-Jier Ho
Y.K. Fang
C.Y. Shu
Chin-Yuan Hsu
Jiann-Ruey Chen
M.S. Ju
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Transient analysis
Ferroelectric materials
Power semiconductor switches
Semiconductor diodes
Infrared sensors
Transient response
Date: 1999-05
Issue Date: 2018-12-21T08:14:07Z
Publisher: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Abstract: Abstract: thin PbTiO/sub 3/-n-p/sup +/ silicon switch diode has been developed, in which the switching voltage (the turned-on voltage) changes in proportion to the infrared light power. The diode has a rapid response time of 0.65 /spl mu/s compared with other conventional infrared sensors. It is attributed to the rapid switching device structure and the smaller pyroelectric layer thickness, 50 nm. In this paper, we have analyzed the rapid switching transient response by using heat conduction and switching theory successfully. The experimental results are in agreement with the theoretical analysis.
Relation: 46(3) pp.502-510
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51763
Appears in Collections:[電機工程學系] 期刊論文

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