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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51762

Title: A Novel SiC/Si Heterojunction Diode with High-temperature Bi-directional N-shaped Negative-differential-resistance
Authors: Kuen-HsienWu
Ho Jyh-Jier
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 1999-07
Issue Date: 2018-12-21T08:10:31Z
Publisher: Solid-State Electronics
Abstract: Abstract: A novel n-SiC/p-Si heterojunction diode with high-temperature bi-directional N-shaped negative-differential-resistances (NRDs) was reported. At room temperature, the device possesses NDRs with peak-to-valley current ratios (PVCRs) of about 21 and 236 at forward and reverse biases, respectively. Under reverse biases, this device achieves an NDR with a PVCR of 40 at 200°C. In addition, it possesses obvious NDRs even up to 300°C. This high-temperature NDR characteristic provides this novel SiC/Si heterojunction diode a potential for high-temperature applications, such as high-temperature solid-state switches.
Relation: 43(7) pp.1215-1217
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51762
Appears in Collections:[電機工程學系] 期刊論文

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