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Title: Improvement of beta-SiC/Si pn Diode High Temperature Characteristics with Porous Silicon Layer
Authors: W.T. Hsieh
Y.K. Fang
W.J. Lee
C.W. Ho
K.H. Wu
J.J. Ho
J.D. Hwang
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2000-01-06
Issue Date: 2018-12-21T07:54:37Z
Publisher: Electronics Letters
Abstract: Abstract: It is demonstrated experimentally that the /spl beta/-SiC/Si pn diode high temperature characteristics can be improved by adding a porous silicon layer on the interface of /spl beta/-SiC/Si. The reverse breakdown voltage can be increased from 3 to 16 V at room temperature and from 2 to 11 V at 100/spl deg/C and the rectifying characteristic of the pn diode was extended from 125 to 200/spl deg/C. The significant improvement is attributed to the suppression of the leakage current due to the inherent high resistivity and the flexibility of the porous silicon material.
Relation: 36(1) pp.86-87
Appears in Collections:[Department of Electrical Engineering] Periodical Articles

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