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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51757

Title: An a-SiGeH Phototransistor Integrated a Pd Film on Glass Substrate for Hydrogen Monitoring
Authors: W.T. Hsieh
Y.K. Fang
W.J. Lee
K.H. Wu
J.J. Ho
K.H. Chen
S.Y. Huang
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Hydrogen
Date: 2000-05
Issue Date: 2018-12-21T07:51:24Z
Publisher: IEEE Transactions on Electron Devices
Abstract: Abstract: A novel a-SiGe:H optoelectronic hydrogen gas sensing device has been developed. The optoelectronic gas sensing device integrated a high optical gain a-SiGe:H optical sensor with a sputtered palladium (Pd) film on a glass substrate. Through the mechanism of the Pd film's transmitted optical power modulated with the H/sub 2/ concentration in atmosphere, the device can be operated at room temperature with a wider range (50 ppm to 133000 ppm) and faster response, in comparison to a conventional Pd catalytic type H/sub 2/ sensors, thus providing a good candidate for hydrogen monitoring.
Relation: 47(5) pp.939-943
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51757
Appears in Collections:[電機工程學系] 期刊論文

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