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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51756

Title: To Suppress Dark Current of High Temperature -SiC/Si Optoelectronic Devices with Porous Silicon
Authors: W.T. Hsieh
Y.K. Fang
W.J. Lee
K.H. Wu
J.J. Ho
K.H. Chen
S.Y. Huang
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2000-10-26
Issue Date: 2018-12-21T07:44:24Z
Publisher: Electronics Letters
Abstract: Abstract: The suppression of high temperature dark current in a /spl beta/-SiC/Si optoelectronic device with a porous substrate has been studied. A pin structure was used to demonstrate the applicability. Experimental results show a 12-fold improvement in optical gain at 200/spl deg/C operating temperature for the sample prepared on a porous silicon substrate compared to the sample prepared on a Si substrate. The improvement is attributed to the suppression of dark current by the high resistivity and flexibility of the porous substrate.
Relation: 36(22) pp.1869-1870
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51756
Appears in Collections:[電機工程學系] 期刊論文

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