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Title: Using Porous Silicon As Semi-Insulating Substrate for a-SiC High Temperature Optical-Sensing Devices
Authors: W.T. Hsieh
Y.K. Fang
K.H. Wu
W.J. Lee
J.J. Ho
C.W. Ho
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Silicon
Date: 2001-04
Issue Date: 2018-12-21T07:35:11Z
Publisher: IEEE Transactions on Electron Devices
Abstract: Abstract: This work demonstrates the availability of using porous silicon as semi-insulating substrate for /spl beta/-SiC high temperature optical sensing devices. An MSM structure was fabricated both on a porous silicon substrate and a conventional silicon substrate, respectively. Experimental results show the optical current ratio can be improved up to 400% at room temperature and 3000% at 200/spl deg/C operating temperature, respectively, with the porous silicon substrate.
Relation: 48(40 pp.801-803
Appears in Collections:[Department of Electrical Engineering] Periodical Articles

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