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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51750

Title: Cubic Single-Crystalline Si1-x-yCxNy Films with Mirror Face Prepared by RTCVD
Authors: Shyh-Fann Ting
Yean-Kuen Fang
Wen-Tse Hsieh
Yong-Shiuan Tsair
Cheng-Nan Chang
Chun-Sheng Lin
Ming-Chun Hsieh
Hsin-Che Chiang
Jyh-Jier Ho
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: silicon compounds
chemical vapour deposition
scanning electron microscopy
semiconductor materials
Date: 2001-09-11
Issue Date: 2018-12-21T07:23:00Z
Publisher: The Electrochemical Society
Abstract: Abstract: This paper reports the growth of single-crystalline silicon carbon nitride Formula films on crystal silicon substrate using Formula for carbon source by rapid thermal chemical vapor deposition (RTCVD). Based on the scanning electron microscope analysis, the Formula films are smooth on the surface and at the Formula interface, which is important for device applications. A model to explain the growing mechanism of the Formula film is being proposed. © 2001 The Electrochemical Society. All rights reserved.
Relation: 4(11) pp.91-93
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51750
Appears in Collections:[電機工程學系] 期刊論文

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