National Taiwan Ocean University Institutional Repository:Item 987654321/51749
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 27320/39164
Visitors : 2479235      Online Users : 36
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51749

Title: A High Breakdown-Voltage SiCNSi Heterojunction Diode for High-Temperature Applications
Authors: S.F. Ting
Y.K. Fang
W.T. Hsieh
Y.S. Tsair
C.N. Chang
C.S. Lin
M.C. Hsieh
H.C. Chiang
J.J. Ho
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Heterojunctions
Diodes
Substrates
Temperature
Semiconductor films
Leakage current
Chemical vapor deposition
Optical films
Crystallization
Electric resistance
Date: 2002-08-07
Issue Date: 2018-12-21T07:18:15Z
Publisher: IEEE Electron Device Letters
Abstract: Abstract: Cubic crystalline p-SiCN films are deposited on n-Si[100] substrates to form SiCN/Si heterojunction diodes (HJDs) with a rapid thermal chemical vapor deposition (RTCVD) technique. The developed SiCN/Si HJDs exhibit good rectifying properties up to 200/spl deg/C. At room temperature, the reverse breakdown voltage is more than 29 V at the leakage current density of 1.2/spl times/10/sup -4/ A/cm/sup 2/. Even at 200/spl deg/C, the typical breakdown voltage of SiCN/Si HJDs is still preserved about 5 V at the leakage current density of 1.47/spl times/10/sup -4/ A/cm/sup 2/. These properties are better than the /spl beta/-SiC on Si HJDs for high temperature applications.
Relation: 23(3) pp.142-144
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51749
Appears in Collections:[Department of Electrical Engineering] Periodical Articles

Files in This Item:

File Description SizeFormat
index.html0KbHTML16View/Open


All items in NTOUR are protected by copyright, with all rights reserved.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback