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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51749

Title: A High Breakdown-Voltage SiCNSi Heterojunction Diode for High-Temperature Applications
Authors: S.F. Ting
Y.K. Fang
W.T. Hsieh
Y.S. Tsair
C.N. Chang
C.S. Lin
M.C. Hsieh
H.C. Chiang
J.J. Ho
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Heterojunctions
Semiconductor films
Leakage current
Chemical vapor deposition
Optical films
Electric resistance
Date: 2002-08-07
Issue Date: 2018-12-21T07:18:15Z
Publisher: IEEE Electron Device Letters
Abstract: Abstract: Cubic crystalline p-SiCN films are deposited on n-Si[100] substrates to form SiCN/Si heterojunction diodes (HJDs) with a rapid thermal chemical vapor deposition (RTCVD) technique. The developed SiCN/Si HJDs exhibit good rectifying properties up to 200/spl deg/C. At room temperature, the reverse breakdown voltage is more than 29 V at the leakage current density of 1.2/spl times/10/sup -4/ A/cm/sup 2/. Even at 200/spl deg/C, the typical breakdown voltage of SiCN/Si HJDs is still preserved about 5 V at the leakage current density of 1.47/spl times/10/sup -4/ A/cm/sup 2/. These properties are better than the /spl beta/-SiC on Si HJDs for high temperature applications.
Relation: 23(3) pp.142-144
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51749
Appears in Collections:[電機工程學系] 期刊論文

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