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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51745

Title: Design and Fabrication of a Novel Crystal SiGeC Far Infrared Sensor with Wavelength 8-14 Micrometer
Authors: Ming-Chun Hsieh
Yean-Kuen Fang
Pei-Ming Wu
Chun-Che Yang
Yu-Cheng Lin
Wen-De Wang
Shyh-Fann Ting
Jyh-Jier Ho
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Fabrication
Infrared sensors
Finite impulse response filter
Thermal sensors
Infrared detectors
Thermal stresses
Temperature sensors
Micromachining
Thermal resistance
Thermistors
Date: 2002-12-10
Issue Date: 2018-12-21T07:03:43Z
Publisher: IEEE Sensors Journal
Abstract: Abstract: In this paper, we report the design, fabrication, and performance of a novel crystal SiGeC infrared sensor with wavelength 8-14 /spl mu/m by bulk micromachining technology for portable far infrared ray (FIR) in rehabilitation system application. The working principle of the sensor is based on the change of thermistor's resistance under the irradiation FIR light. The thermistor in the IR detector is made of Si/sub 0.68/Ge/sub 0.31/C/sub 0.01/ thin films for its large activation energy of 0.21 ev and the temperature coefficient (TCR) of -2.74%, respectively. Finite element method package ANSYS has been employed for analyze of the thermal isolation and stress distribution in the IR detector. The dimension of the microbridge fabricated by anisotropic wet etching is 2000 /spl times/ 2000 /spl times/ 25 /spl mu/m/sup 3/. The developed FIR sensor exhibits the thermal conductance of 1.85 /spl times/ 10/sup -1/ WK/sup -1/ and the heat capacity as 7.4 /spl times/ 10/sup -7/ JK/sup -1/ under air ambient at room temperature. The responsivity is 523 VW/sup -1/ in the waveband 8-14 /spl mu/m with nickel absorber under a bias voltage 1.5 V.
Relation: 2(4) pp.360-365
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51745
Appears in Collections:[電機工程學系] 期刊論文

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