English  |  正體中文  |  简体中文  |  Items with full text/Total items : 26988/38789
Visitors : 2345292      Online Users : 40
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51739

Title: Low-temperature Poly-SiGe Alloy Growth of High gain speed pin Infrared Photo-sensor with Gold Induced Lateral Crystallization
Authors: C.Y. Chen
Jyh-Jier Ho
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Infrared detectors
p-i-n photodiodes
Germanium alloys
Silicon alloys
Semiconductor epitaxial layers
Date: 2003-08
Issue Date: 2018-12-21T06:42:25Z
Publisher: IEEE Transactions on Electron Devices
Abstract: Abstract: The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications.
Relation: 50(8) pp.1807-1812
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51739
Appears in Collections:[電機工程學系] 期刊論文

Files in This Item:

File Description SizeFormat

All items in NTOUR are protected by copyright, with all rights reserved.


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback