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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51728

Title: Resonant-tunneling-diode effect in Si-based double-barrier structure sputtered at room temperature
Authors: Yuang-Tung Cheng
Jyh-Jier Ho
T. Wei
J. Ho
Sheng-Shih Wang
J. Lin
C. Yeh
Kang L Wang
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Resonant-tunneling-diode (RTD)
Thin films
Peak-to-valley current ratio (PVCR)
Date: 2015-06
Issue Date: 2018-12-21T06:14:52Z
Publisher: International Journal of Research in Engineering and Science
Abstract: Abstract: This paper presents the resonant-tunneling-diode (RTD) effect in a SiO2/n-Si/SiO2/p-Si
double-barrier structural thin films fabricated using radio frequency (RF) magnetron sputtering at room
temperature (300 K). The implementation of a circuit prototype is first accomplished by modulating a Si-based
RTD with a solar-cell bias voltage. The important electrical properties of the peak current density and
peak-to-valley current ratio (PVCR) are 184 nA/cm2
and 1.67, respectively. The connection between the two
RTDs in series is biased by a solar cell. The value of the switching transition time is 24.37 μs; oscillation occurs
with an operating frequency of 41.6 KHz. In semiconductor applications, the developed RTD is characterized by
stability, enduring environmentally elevated temperature and relative humidity.
Relation: 3(6) pp.25-28
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51728
Appears in Collections:[電機工程學系] 期刊論文

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