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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51708

Title: InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet Between Base-Emitter Junction
Authors: Jung Hui Tsai
Shao Yen Chiu
Wen Shiung Lour
Chien Ming Li
Yi Zhen Wu
Ning Xing Su
Yin Shan Huang
Contributors: 國立臺灣海洋大學電機工程學系
Keywords: Heterojunction Bipolar Transistor
Offset Voltage
Potential Spike
Date: 2008
Issue Date: 2018-12-21T01:09:33Z
Publisher: Advanced Materials Research
Abstract: Abstract: In this article, a novel InGaP/GaAs pnp δ-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a δ-doped sheet between two spacer layers at the emitter-base junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and an offset voltage of 100 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.
Relation: 47-50
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51708
Appears in Collections:[電機工程學系] 期刊論文

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