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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51707

Title: Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor
Authors: Li-Yang Chen
Shiou-Ying Cheng
Wen-Shiung Lour
Jung-Hui Tsai
Der-Feng Guo
Tsung-Han Tsai
Tzu-Pin Chen
Yi-Chun Liu
Wen-Chau Liu
Contributors: 國立臺灣海洋大學電機工程學系
Date: 2008
Issue Date: 2018-12-21T01:03:18Z
Publisher: Semicond.Sci.Technol.
Abstract: Abstract: The reliability-related properties of an InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT), using the non-annealed ohmic-recess (NAOR) approach, are studied and demonstrated. The NAOR device shows significantly improved dc and radio frequency (RF) performance over a wide temperature range (300–500 K). With a 1 × 100 µm2 gate-dimension MHEMT by the NAOR approach, the considerably improved thermal stability and dc performances, including lower temperature variation coefficients on turn-on voltage (−1.38 mV K−1) and gate-drain breakdown voltage (−30.4 mV K−1), and on-resistance (2.41 × 10−3 Ω mm K−1), are obtained as the temperature is increased from 300 to 500 K. For RF characteristics, the NAOR device also shows a low degradation rate on drain saturation current operating regimes (−5.52 × 10−4 K−1) as the temperature is increased from 300 to 400 K. In addition, based on the lifetime tests, an activation energy of 1.33 eV and a projected median lifetime of 1.2 × 107 h at Tch = 125 °C are obtained for the NAOR MHEMT.
Relation: 23(12)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51707
Appears in Collections:[電機工程學系] 期刊論文

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