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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51706

Title: Application of Schottky Bulk-Layer Design on Double-Heterojunction Pseudomorphic AlGaAs/InGaAs/AlGaAs High Electron Mobility Transistors(DH-HEMTs)
Authors: Meng Kai Hsu Jung Hui Tsai Shao Yen Chiu Chung Hsien Wu Kum Chieh Liang Kang Ping Liu, Tze Shuan Huang Wen Shiung Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: DH-HEMTs
Field-Plate Gate
Date: 2008-06
Issue Date: 2018-12-21
Publisher: Advanced Materials Research
Abstract: Abstract: In this work, an application of wide-gap updoed-Al0.22Ga0.78As bulk to perform the field-plate gate (FP-gate) on Al0.22Ga0.78As/In16Ga84As/Al0.22Ga0.78As DH-HEMTs was investigated. The simulated FPG-devices with a bulk thickness of 1200 Å, exhibit an excellent dispersing property to the electric field peak under gate electrode near to drain side, hence, the breakdown characteristics were effectively improved. Measured gate-diode performance of FPG-device presents a higher breakdown voltage (VBR) of -25.5 V than devices with single recess (SRG-device). Enhancement of device breakdown is contributive to microwave power performances. At 2.4 GHz load-pull measurement of studied devices which were biased at class AB operation, the saturated output power (POUT), power gain (GP) and power-added efficiency (PAE) were 13.06 dBm (202 mW/mm), 12.8 db and 47.3% for FPG-device. These measured results of SRG-device were 10.3 dBm(107 mW/mm), 13.2 db and 38.5%, According to the simulated results, FPG-devices structuring with a bulk layer exhibit excellent performance for high breakdown and microwave power operation.
Relation: 47-50
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51706
Appears in Collections:[電機工程學系] 期刊論文

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