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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51701

Title: On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)
Authors: Tzu-Pin Chen
Chi-Jhung Lee
Wen-Shiung Lour
Der-Feng Guo
Jung-Hui Tsai
Wen-Chau Liu
Contributors: 國立臺灣海洋大學電機工程學系
Date: 2009
Issue Date: 2018-12-20T01:55:52Z
Publisher: Solid-State Electronics
Abstract: Abstract: The breakdown behaviors of InP/InGaAs single heterojunction bipolar transistor (SHBT) and double heterojunction bipolar transistor (DHBT) are studied and demonstrated. By using a composite collector structure at the base–collector heterojunction, the undesired current-blocking effect, switching, hysteresis phenomenon usually found in an InP/InGaAs conventional DHBT are not observed in our DHBT device. Experimentally, as compared with the studied SHBT, the studied DHBT reveals the enhanced breakdown voltages, lower collector leakage current ICO, and smaller electron impact ionization α. Moreover, the temperature-dependent electron impact ionization characteristics and electrical reliability for both devices are also studied. Therefore, the studied DHBT device provides the promise for millimeter-wave and power circuit applications.
Relation: 53(2) pp.190-194
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51701
Appears in Collections:[電機工程學系] 期刊論文

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