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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51700

Title: Microwave complementary doped-channel field-effect transistors
Authors: Jung-HuiTsai
Shao-Yen Chiu
Wen-Shiung Lour
Wen-Chau Liu
Chien-Ming Li
Ning-Xing Su
Yi-Zhen Wu
Yin-Shan Huang
Contributors: 國立臺灣海洋大學電機工程學系
Keywords: Complementary
Inverter
InGaP/InGaAs/GaAs
Doped-channel
Field-effect transistors
Confinement effect
Noise margin
Date: 2009
Issue Date: 2018-12-20T01:50:24Z
Publisher: Superlattices and Microstructures
Abstract: Abstract: In this paper, the device performance and complementary inverter of the InGaP/InGaAs/GaAs doped-channel field-effect transistors (DCFETs) by two-dimensional semiconductor simulation are demonstrated. Due to the relatively large conduction (valance) band discontinuity at InGaP/InGaAs interface, it provides good confinement effect for transporting carriers in InGaAs channel layer for the n-channel (p-channel) device. The large gate turn-on voltage is achieved due to the employment of the wide energy-gap InGaP material as gate layer. The ft and fmax are of 6.5 (2.1) and 25 (5) GHz for the n-channel (p-channel) device. Furthermore, the co-integrated structures, by the combination of n- and p-channel field-effect transistors, could form a complementary inverter and the relatively large noise margins are achieved.
Relation: 45(1) pp.33-38
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51700
Appears in Collections:[電機工程學系] 期刊論文

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