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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51697

Title: High-performance InGaP/GaAs pnp δ-doped heterojunction bipolar transistor
Authors: Shao-Yen Chiu
Wen-Shiung Lour
Jung-Hui Tsai
Yu-Chi Kang
Contributors: 國立臺灣海洋大學電機工程學系
Date: 2009
Issue Date: 2018-12-20T01:32:17Z
Publisher: Semiconductors
Abstract: Abstract: In this article, a novel InGaP/GaAs pnp delta-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a delta-doped sheet between two spacer layers at the emitter-base junction effectively eliminates the potential spike and increases the barrier for electrons, simultaneously. Experimentally, a high current gain of 22 and an offset voltage of 100 mV are achieved. The offset voltage is much smaller than the reported InGaP/GaAs npn HBTs. The proposed device can be used for linear amplifiers and low power complementary integrated circuit applications
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51697
Appears in Collections:[電機工程學系] 期刊論文

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