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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51689

Title: InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures
Authors: Jung-Hui Tsai
Wen-Shiung Lour
Der-Feng Guo
Wen-Chau Liu
Yi-Zhen Wu
Ying-Feng Dai
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Minority Carrier
Current Gain
Energy Band Diagram
Base Device
Date: 2010-08-18
Issue Date: 2018-12-18T03:15:25Z
Publisher: Physics of Semiconductor Devices
Abstract: Abstract: High-performance InP/GaAsSb double heteroj unction bipolar transistor (DHBT) employing GaAsSb/lnGaAs superlattice-base structure is demonstrated and compared with GaAsSb bulk-base structure by two-dimensional simulation analysis. The proposed device exhibits a higher current gain of 257 than the conventional InP/GaAsSb type-II DHBT with a lower current gain of 180, attributed to the tynneling behavior of minority carriers in the GaAsSb/lnGaAs superlattice-base region under large forward base—emitter bias. In addition, a larger unity gain cutoff frequency of 19.1 GHz is botained for the superlattice-base device than that of 17.2 GHz for the bulk-base device.
Relation: 44(8) pp.1096-1100
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51689
Appears in Collections:[電機工程學系] 期刊論文

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