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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51688

Title: InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage
Authors: Jung-Hui Tsai
Wen-Shiung Lour
Tzu-Yen Weng
Chien-Ming Li
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Field Effect Transistor
Mode Device
Enhancement Mode
Saturation Voltage
Channel Concentration
Date: 2010-03-05
Issue Date: 2018-12-18T03:11:57Z
Publisher: Physics of Semiconductor Devices
Abstract: Abstract: InGaP/InGaAs doped-channel direct-coupled field-effect transistor logic (DCFL) with relatively low supple voltage is demonstrated by two-dimensional analysis. In the integrated enhancement/depletion-mode transistors, subband and two-dimensional electron gas (2DEG) are formed in the InGaAs strain channels, which substantially increase the channel concentration and decrease the drain-to-source saturation voltage. The integrated devices show high turn-on voltage, high transconductance, broad gate voltage swing, and excellent high frequency performance, simultaneously. Furthermore, the integrated devices exhibit large noise margins for DCFL application with low supply voltage of 1.5 V attributed from the relatively small saturation voltages of the studied integrated devices.
Relation: 44(2) pp.223-227
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51688
Appears in Collections:[電機工程學系] 期刊論文

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