English  |  正體中文  |  简体中文  |  Items with full text/Total items : 27287/39131
Visitors : 2441932      Online Users : 41
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51687

Title: InGaP/GaAs/InGaAs doped-channel field-effect transistor using camel-like gate structure
Authors: Jung-Hui Tsai
Der-Feng Guo
Yuan-Hong Lee
Ning-Feng Dale
Wen-Shiung Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Gallium arsenide
Indium gallium arsenide
FETs
Voltage
HEMTs
MODFETs
Circuits
Schottky barriers
Ohmic contacts
Transconductance
Date: 2010-07-26
Issue Date: 2018-12-18T03:09:06Z
Relation: 2010 International Conference on Microwave and Millimeter Wave Technology
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51687
Appears in Collections:[電機工程學系] 期刊論文

Files in This Item:

File Description SizeFormat
index.html0KbHTML9View/Open


All items in NTOUR are protected by copyright, with all rights reserved.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback