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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51686

Title: InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure
Authors: Jung-Hui Tsai
Der-Feng Guo
Yuan-Hong Lee
Ning-Feng Dale
Wen-Shiung Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Gallium arsenide
Bipolar transistors
Indium gallium arsenide
Low voltage
Molecular beam epitaxial growth
Capacitive sensors
Heterojunction bipolar transistors
Microwave circuits
Date: 2010-07-26
Issue Date: 2018-12-18T03:05:55Z
Publisher: 2010 International Conference on Microwave and Millimeter Wave Technology
Abstract: Abstract: In this article, the performance of a novel InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure is demonstrated by experimental results. The injecting electrons from superlattice emitter are easy to transport into the superlattice-base region for promoting the collector current by tunneling behavior. Furthermore, the average energy gap of base regime is substantially reduced by the use of InGaAs/GaAs superlattice structure for the requirement of low turn-on voltage. Experimentally, the transistor exhibits a maximum common-emitter current gain of 295 and a relatively low collector-emitter voltage of only 16 mV. In particular, the ideality factor of collector current near to unity is obtained. Based on the excellent transistor performance, the studied can provide a promise for signal amplifier and low-power circuit applications.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51686
Appears in Collections:[電機工程學系] 期刊論文

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