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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51682

Title: Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles
Authors: Jung-Hui Tsai
Der-Feng Guo
Wen-Shiung Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: GaAs
Saturation Current Density
Device Linearity
Conduction Band Discon Tinuity
Gate Layer
Date: 2011-09-17
Issue Date: 2018-12-18T02:51:47Z
Publisher: Physics Of Semiconductor Devices
Abstract: Abstract: In this article, the comparison of DC performance on InGaP/GaAs pseudomorphic field-effect transistors with tripe doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity because more twodimensional electron gases are formed in the heaviest doped channel to enhance the magnitude of negative threshold voltage. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.
Relation: 45 pp.1231
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51682
Appears in Collections:[電機工程學系] 期刊論文

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