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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51681

Title: Cell-Temperature Determination in InGaP–(In)GaAs–Ge Triple-Junction Solar Cells
Authors: Wei-Chen Yang
Chieh Lo
Chin-Ying Wei
Wen-Shiung Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Photovoltaic cells
Temperature measurement
Temperature
Radiation effects
Ocean temperature
Current density
Date: 2011-10
Issue Date: 2018-12-18T02:49:18Z
Publisher: IEEE Electron Device Letters
Abstract: Abstract: Temperature-sensitive voltages are derived from current-voltage characteristics of an InGaP-(In)GaAs-Ge triple-junction solar cell biased at various current densities in the dark and under irradiation. Dynamic measurements of cell temperatures were performed with a solar simulator by alternately permitting and blocking the sunlight. An initial temperature increasing rate of 1°C/s was determined for the solar cell exposed to 1-sun light intensity of 100 mW ·cm -2 . Furthermore, the times required for increases of 5°C, 10°C, and 15°C in the cell temperature were 7, 21, and 48 s, respectively. Experimentally estimated cell temperature was finally stabilized at 48°C ± 0.5°C.
Relation: 32(10) pp.1412-1414
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51681
Appears in Collections:[電機工程學系] 期刊論文

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