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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51680

Title: A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)
Authors: Jung-Hui Tsai
Ching-Sung Lee
Wen-Shiung Lour
Yung-Chun Ma
Sheng-Shiun Ye
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: GaAs
Transmission Coefficient
Current Gain
Potential Spike
Emitter Junction
Date: 2011-05-15
Issue Date: 2018-12-18T02:46:13Z
Publisher: Physics of Semiconductor Devices
Abstract: Abstract: Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz.
Relation: 45(5) pp.646-649
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51680
Appears in Collections:[電機工程學系] 期刊論文

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