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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51679

Title: Effect of Emitter Ledge Thickness on InGaP ∕ GaAs Heterojunction Bipolar Transistors
Authors: Tzu-Pin Chen
Chi-Jhung Lee
Shiou-Ying Cheng
Wen-Shiung Lour
Jung-Hui Tsai
Der-Feng Guo
Ghun-Wei Ku
Wen-Chau Liu
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: gallium arsenide
gallium compounds
heterojunction bipolar transistors
III-V semiconductors
indium compounds
semiconductor device reliability
thermal stability
Date: 2008-12-09
Issue Date: 2018-12-18T02:39:42Z
Publisher: Electrochemical and Solid-State Letters
Abstract: Abstract: The temperature-dependent characteristics of Formula heterojunction bipolar transistors with different emitter ledge thickness Formula are studied and demonstrated. From experimental results, devices Formula Formula and Formula Formula show the highest current gains, lowest base current, and base current ideality factors. Devices Formula and Formula also exhibit an improved thermal stability on dc current–voltage characteristics. Moreover, device Formula shows the best reliability performance after a Formula stress test. Therefore, the data support that the optimum emitter ledge thickness is between 100 and Formula .
Relation: 12(2) pp.41-43
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51679
Appears in Collections:[電機工程學系] 期刊論文

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