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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51671

Title: Photovoltaic performance of Ge-subcell evaluated directly in Ge-based triple-junction solar cells
Authors: T. H. Huang
H. Lo
C. Lo
M. C. Wu
W. S. Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Cell Temperature
Ge-subcell with Light Filter
InGaP/(In)GaAs/Ge
Triple Junction
Date: 2016-09-16
Issue Date: 2018-12-14T08:36:35Z
Publisher: Journal of Solid State Science and Technology
Abstract: Abstract: A diffused germanium (Ge) p-n junction as a Ge-subcell was fabricated by using an overall Ge-based triple-junction structure to evaluate its photovoltaic properties. The key processes in the proposed Ge-subcell include: (i) patterning a contact window with 5% area of the Ge-subcell to form top electrodes and (ii) semiconductor layers grown for the InGaP top cell and the (In)GaAs middle cell are remained atop of the Ge-subcell. Thus, our Ge-subcell has a duplicate of absorption spectrum of the Ge bottom cell in the triple-junction solar cell. Important photovoltaic parameters extracted showed that the photo-generated current density is ∼26 mA/cm2 being independent of the testing temperature. Besides, open-circuit voltages linearly decrease with increasing temperature and hence the Ge-subcell cannot act as a practical solar cell when temperature is higher than ∼140°C. Furthermore, maximum conversion efficiency (ηmax) at 30°C is 3.22% for the intrinsic Ge-subcell. A corresponding temperature coefficient is ∼−0.037%/°C. Cell temperature of our Ge-subcell under a 100 mW/cm2 simulator increases quickly to saturate at ∼48°C. This causes reduction of more than 0.8% in ηmax.
Relation: 5(10) pp.266-270
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51671
Appears in Collections:[電機工程學系] 期刊論文

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