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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51647

Title: Photoluminescence of localized excitons in ZnCdO thin films grown by molecular beam epitaxy
Authors: T.Y.Wu
Contributors: 國立臺灣海洋大學電機工程學系
Keywords: A. Semiconductors
B. Molecular beam epitaxy
D. Localization
E. Photoluminescence
Date: 2016-07
Issue Date: 2018-12-14T01:29:01Z
Publisher: Solid State Communications
Abstract: Abstract: We have investigated the luminescence characteristics of Zn1−xCdxO thin films with different Cd contents grown by molecular beam epitaxy system. The temperature-dependent photoluminescence (PL) and excitation power-dependent PL spectra were measured to clarify the luminescence mechanisms of the Zn1−xCdxO thin films. The peak energy of the Zn1−xCdxO thin films with increasing the Cd concentration is observed as redshift and can be fitted by the quadratic function of alloy content. The broadened full-width at half-maximum (FWHM) estimated from the 15 K PL spectra as a function of Cd content shows a larger deviation between the experimental values and theoretical curve, which indicates that experimental FWHM values are affected not only by alloy compositional disorder but also by localized excitons occupying states in the tail of the density of states. The Urbach energy determined from an analysis of the lineshape of the low-energy side of the PL spectrum and the degree of localization effect estimated from the temperature-induced S-shaped PL peak position described an increasing mean exciton-localization effects in ZnCdO films with increasing the Cd content. In addition, the PL intensity and peak position as a function of excitation power are carried out to clarify the types of radiative recombination and the effects of localized exciton in the ZnCdO films with different Cd contents.
Relation: 237-238 pp.1-4
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51647
Appears in Collections:[電機工程學系] 期刊論文

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