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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51630

Title: Optical studies of type I GaAs1 xSbx/GaAs multiple quantum well structures
Authors: P. Sitarek
H.P. Hsu
Y.S. Huang
J.M. Lin
H.H. Lin
K.K. Tiong
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2009
Issue Date: 2018-12-13T03:13:38Z
Publisher: JOURNAL OF APPLIED PHYSICS
Abstract: Abstract: We present photoreflectance (PR) and surface photovoltage spectroscopy (SPS) studies of GaAs1−xSbx/GaAs multiple quantum well structures with fundamental transition close to 1.3 μm. These two optical diagnostic tools are powerful supplementary techniques in the investigations of complicated quantum systems. PR gives detailed information about the heavy-holes related transitions, while SPS contains additional information concerning light-holes related ones. The comparison of experimental data and theoretical analysis based on the envelope function approximation, including strain and exciton binding energy, allows us to identify the observed PR and SPS features. The results point to the existence of weak type-I band alignment in samples being studied, and the Sb content dependent of conduction band offset is found to agree well with that reported by Wang et al. [Phys. Rev. B 70, 195339 (2004)].
Relation: 105(12)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51630
Appears in Collections:[電機工程學系] 期刊論文

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