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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51617

Title: Surface Morphology and Properties of GaAs Epilayers Controlled by Temperature Difference Method of Liquid Phase Epitaxy
Authors: Y.K.Su
C.C.Wei
S.C.Lu
C.C.Chang
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Liquid phase epitaxy
GaAs thin films
surface morphology
Date: 1986
Issue Date: 2018-12-12T07:24:16Z
Publisher: Bulletin of Material Science
Abstract: Abstract: Epilayers of gallium arsenide were grown by using the steady-state temperature difference method of liquid phase epitaxy. The surface of grown layers was smooth and shiny. Carrier concentrations of films varying from 1016 to 1017 cm−3 could be obtained with good reproducibility. The surface morphology growth rate, carrier concentration and Hall mobility of the epilayers were studied. Several distinct types of surface features were also investigated and explained. A segregation coefficient for the net carrier concentration versus tin concentration in the growth melt was calculated as 1·84 × 10−4 at 700°C for (100) GaAs substrate. Thickness control for epilayers down to submicron can be obtained reproducibly.
Relation: 8(1) pp.29-38
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51617
Appears in Collections:[電機工程學系] 期刊論文

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