Abstract: Epilayers of gallium arsenide were grown by using the steady-state temperature difference method of liquid phase epitaxy. The surface of grown layers was smooth and shiny. Carrier concentrations of films varying from 1016 to 1017 cm−3 could be obtained with good reproducibility. The surface morphology growth rate, carrier concentration and Hall mobility of the epilayers were studied. Several distinct types of surface features were also investigated and explained. A segregation coefficient for the net carrier concentration versus tin concentration in the growth melt was calculated as 1·84 × 10−4 at 700°C for (100) GaAs substrate. Thickness control for epilayers down to submicron can be obtained reproducibly.