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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51616

Title: Growth and Characterization of ZnSe Single Crystals by Closed Tube Method
Authors: C. C. Chang
C. C. Wei
Y. K. Su
H. C. Tzeng
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 1987-07
Issue Date: 2018-12-12T07:19:00Z
Publisher: Journal of Crystal Growth
Abstract: Abstract: A closed tube method was used to grow plate-like ZnSe single crystals, area 1–15 mm2, of zinc blende structure from a stoichiometric melt. All specimens were n-type with resistivities in the range of 3×105 to 2×107 Ω cm. The corresponding mobilities and carrier concentrations are in the range of 14 to 54 cm2/V·s and 1.8×1010 to 1.4×1012cm-3, respectively.
Relation: 84(1-2) pp.11-20
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/51616
Appears in Collections:[電機工程學系] 期刊論文

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